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Temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition

机译:mgB2烧结的温度和磁场依赖性电阻率   在高温和高压条件下

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摘要

We report the temperature- and magnetic-field-dependent resistivity of MgB2sintered at high temperature and high pressure condition. The superconductingtransition width for the resistivity measurement was about 0.4 K, and thelow-field magnetization showed a sharp superconducting transition with atransition width of about 1 K. The resistivity in the normal state roughlyfollowed T^2 behavior with smaller residual resistivity ratio (RRR) of 3 overbroad temperature region above 100 K rather than reported T^3 behavior withlarger RRR value of ~ 20 in the samples made at lower pressures. Also, theresistivity did not change appreciably with the applied magnetic field, whichwas different from previous report. These differences were discussed with themicroscopic and structural change due to the high-pressure sintering.
机译:我们报告了在高温高压条件下烧结的MgB2的电阻率与温度和磁场的关系。电阻率测量的超导过渡宽度约为0.4 K,低场磁化强度表现为尖锐的超导过渡,过渡宽度约为1K。在正常状态下,电阻率大致遵循T ^ 2行为,而残余电阻率(RRR)较小。在较低压力下制备的样品中,高于100 K的3个超宽温度区域,而不是报告的T ^ 3行为,RRR值为〜20。而且,电阻率不会随施加的磁场而明显变化,这与以前的报道不同。通过高压烧结的微观和结构变化讨论了这些差异。

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